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SMD Type
MOSFET
MOS Field Effect Transistor 2SK3900
TO-263
+0.1 1.27-0.1
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Low On-state resistance RDS(on)1 = 8.0mU MAX. (VGS = 10 V, ID = 41A) RDS(on)2 = 10 mU MAX. (VGS = 4.5 V, ID = 41 A)
+0.2 8.7-0.2
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
Low C iss: C iss =3500 pF TYP.
+0.2 5.28-0.2
+0.2 15.25-0.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 60 20 82 246 1.5 104 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD VDD = 48V VGS = 10 V ID =82A ID=41A,VGS(on)=10V,RG=0 ,VDD=30V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=41A VGS=10V,ID=41A VGS=4.5V,ID=41A 1.5 28.1 2.0 56 6.3 7.4 3500 660 240 18 11 62 5.5 65.5 11.5 16.5 8.0 10 Min Typ Max 10 10 2.5 Unit A A V S mU mU pF pF pF ns ns ns ns nC nC nC
5.60
1 Gate 2 Drain 3 Source
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